Leakage Current Distribution of Cu-Contaminated Thin SiO2
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概要
- 論文の詳細を見る
Dielectric degradation of an intentionally Cu-contaminated SiO2 film on an Si substrate was investigated using conducting atomic force microscopy. It was shown that local oxide leakage current did not increase at points occupied by Cu particles, while it increased at points other than that occupied by Cu particles. Combination of sulfuric acid/hydrogen peroxide mixture immersion and total reflection X-ray fluorescence analyses indicated that high-density Cu atoms near the SiO2 surface induced the high leakage current.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-15
著者
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Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
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YAMASAKI Satoshi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
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MIKI Kazushi
Nanotechnology Research Institute-AIST
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Kanda Takahiro
Institute Of Applied Physics University Of Tsukuba
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Tokuda Norio
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kanda Takahiro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Miki Kazushi
Nanotechnology Research Institute-AIST, Tsukuba, Ibaraki 305-8562, Japan
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