Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-05-10
著者
-
Yamanaka Sadanori
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
-
YAMANAKA Shoji
Faculty of Engineering,Hiroshima University
-
Tokuda Norio
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
-
Tokuda N
Univ. Tsukuba Ibaraki Jpn
-
Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
-
YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
-
TOKUDA Norio
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
-
NISHIZAWA Masayasu
Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and
-
MIKI Kazushi
Institute of Applied Physics, University of Tsukuba
-
YAMASAKI Satoshi
Institute of Applied Physics, University of Tsukuba
-
HASUNUMA Ryu
Institute of Applied Physics, University of Tsukuba
-
MIKI Kazushi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
-
MIKI Kazushi
Nanotechnology Research Institute-AIST
-
Tokuda Norio
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
-
MIKI Kazushi
Electrotechnical Laboratory (ETL)
-
Ryu Hasunuma
Institute Of Applied Physics University Of Tsukuba
-
Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
-
Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
-
Miki K
Electrotechnical Laboratory (etl)
-
Miki Kazushi
National Institute Of Materials Science (nims)
-
Miki Kazushi
Aist
-
Miki Kazushi
Nanoarchitecture Group Organic Nanomaterials Center National Institute For Materials Science
-
Tokuda Norio
Institute Of Science And Engineering Kanazawa University
-
Tokuda N
Institute Of Science And Engineering Kanazawa University
-
Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
-
Nishizawa Masayasu
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
関連論文
- Electrical Properties of Lithium Intercalated TiS_2,ZrSe_2,HfSe_2,1T-TaS_2 and VSe_2
- Electrochemical Characteristics of TiS_2, ZrSe_2 and VSe_2 in Secondary Lithium Battery
- Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
- SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
- Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
- Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
- Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
- Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- In Situ Measurements of Drastic Change of Electrical Conductivity and Structure upon Electrochemical Lithium Intercalation in Pyrolyzed Poly(hydrazocarbonyl-1-4-phenylenecarbonyl) Film
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process
- High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Behaviors of surfactant atoms on Si(001) surface
- Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
- Ge Distribution in Ge_n/Si_m Strained-Layer Superlattices
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Optimization of the piezoresistive AFM cantilever design for using at cryogenic temperature
- Helical Type Kicker for Stochastic Momentum Cooling
- Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments
- Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
- Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
- Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
- Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
- Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
- Scanning Tunneling Microscopy of Anisotropic Monatomic Steps on a Vicinal Si(001) - 2 × 1 Surface
- Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
- Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
- Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Characterization of Highly Concentrated Bi Donors Wire-\delta-Doped in Si
- Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
- Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
- Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
- Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
- Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
- Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride
- Leakage Current Distribution of Cu-Contaminated Thin SiO2
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond $ p$–$i$–$n$ Junction
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water