Ge Distribution in Ge_n/Si_m Strained-Layer Superlattices

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Studies on the structure of crescent-shaped GaAs quantum wires by combination of electron microscopy and photoluminescence spectroscopy
Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
Electron States in Crescent GaAs Coupled Quantum-Wires
Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
Selective Growth of Cu Nanowires on Si(111) Substrates
Leakage Current Distribution of Cu-Contaminated Thin SiO_2
Development of High Efficiency Gyrotron with Depressed Collector for ECH System
Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
V-Shaped Gate High Electron Mobility Transistor (VHEMT)
Strain Effects on Interdiffusion in InAs_P_x/InP Heterostructures
Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
Behaviors of surfactant atoms on Si(001) surface
Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
Ge Distribution in Ge_n/Si_m Strained-Layer Superlattices
Phase-Locked Epitaxy Using RHEED Intensity Oscillation
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
A THRUST GENERATION MODEL OF MICROWAVE ROCKET
High-Efficiency Oscillation of 170GHz High-Power Gyrotron at TE_ Mode Using Depressed Collector : Instrumentation, Measurement, and Fabrication Technology
Experimental Study of High-Power Millimeter Wave Transmission of Sapphire Window for Electron Cyclotron Range of Frequencies System
Measurement of Temperature Dependence of Dielectric Permittivity of Sapphire Window for High Power Gyrotrons
Stable,Single-Mode Oscillation with High-Order Volume Mode at 1MW,170GHz Gyrotron
Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
Surface Observation and Modification of Si Substrate in Solutions
Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
Channeling Radiation from 1 MeV Electrons
Optimization of the piezoresistive AFM cantilever design for using at cryogenic temperature
Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments
Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
Heterointerfaces in Strained-Layer Superlattices Studied by Surface-Sensitive XAFS
Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy
Scanning Tunneling Microscopy of Anisotropic Monatomic Steps on a Vicinal Si(001) - 2 × 1 Surface
Structural Model for the Negative Electron Affinity Surface of O/Cs/Si(001)2×1
Electronic Structures of the Single-Domain Si(001)2×1 and 2×8 Surfaces
Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
Monolithic Passivated Stripe Geometry Double Heterostructure Injection Lasers by Selective Chemical Etching : B-6: SEMICONDUCTOR LASERS (I)
Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_ MBE Growth on Si(001) Substrates
Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
High Impurity Doping in Si-MBE Using Liquid Ga Ion Source
Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy

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