Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
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概要
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Threshold voltage shift induced by negative stress voltage application in HfSiOx films was investigated. It was found that the threshold voltage shift is a summation of the voltage shifts due to interface state generation and the generation of traps. It was revealed that the contribution of trap generation, which rapidly increases with the injection of a small amount of holes, is the most influential component in a short term. In a long term, on the other hand, the trap generation, which proceeds linearly with the hole injection, becomes the predominant component, since it does not saturate for a long period.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-05-25
著者
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Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Tamura Chihiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Hayashi Tomohiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Kikuchi Yuuki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ohmori Kenji
Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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