Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride
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概要
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The effects of plasma-enhanced chemical vapor deposition (PE-CVD) silicon nitride (p-SiN) passivation films on time dependent dielectric breakdown (TDDB) of gate oxide were studied. It was found that degradation of TDDB characteristics with p-SiN films was suppressed by the change in p-SiN deposition conditions. The correlation between trapped electron density and TDDB characteristics varied, depending on the p-SiN films. The degradation of TDDB characteristics was also enhanced with phosphosilicate glass (PSG) under the p-SiN passivation film.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Sugahara Yoshiyuki
Device Technology Laboratory Fuji Electric Advanced Technology Co. Ltd.
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Ogino Masaaki
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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