Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
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概要
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We have fabricated high-aspect-ratio monoatomic Cu rows along atomic step edges on vicinal Si(111) substrates. The method consists of two wet processes: (1) the formation of a step/terrace structure by immersing a Si(111) substrate in ultralow-dissolved-oxygen water (LOW) and (2) the formation of the nanowires by immersion in LOW containing Cu ions. A systematic investigation of Si(111) surfaces with the nanowire has been performed by means of atomic force microscopy, Fourier-transform infrared absorption spectroscopy, and total-reflection X-ray fluorescence spectroscopy.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-04-10
著者
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Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
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MIKI Kazushi
Institute of Applied Physics, University of Tsukuba
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YAMASAKI Satoshi
Institute of Applied Physics, University of Tsukuba
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Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan
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Tokuda Norio
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan
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