Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
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概要
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Homoepitaxial growth of SrTiO_3 without introducing any oxidants has been achieved at low temperatures. The growth was carried out by coevaporation of Sr and Ti metals under extremely low oxygen partial pressure (pO_2< 1×10^<-8> Pa). A clear reflection high-energy electron diffraction (RHEED) intensity oscillation from the layer-by-layer growth of SrTiO_3 was observed during the growth at a substrate temperature of 370℃. The deposited film was found to have an approximately stoichiometric composition and a single-phase of SrTiO_3, from the analyses of Auger electron spectroscopy (AES) and RHEED. Oxygen was automatically fed from the substrate to the growing surface. Instead, oxygen vacancies were incorporated into the bulk of the substrate. The incorporated oxygen vacancies were evaluated by positron annihilation.
- 社団法人応用物理学会の論文
- 2002-03-01
著者
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
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SHIMOYAMA Kazuo
Institute of Applied Physics, University of Tsukuba
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KIYOHATRA Masahiro
Institute of Applied Physics, University of Tsukuba
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Kiyohatra Masahiro
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
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Shimoyama Kazuo
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Kiyohara Masahiro
Institute of Applied Physics, University of Tsukuba
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