Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-03-20

著者

• FUNAMOTO Hiroyuki

  Seiko Instruments & Electronics Ltd.

• NISHIKAWA Akira

  Seiko Instruments & Electronics Ltd.

• Funamoto Hiroyuki

  Seiko Instruments Inc.

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• TAKAHASHI Kouji

  Seiko Instruments Inc.

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• Uedono Akira

  Institute Of Applied Physics University Of Tsukuba

• Nishikawa A

  Teikyo Univ. Utsunomiya

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

関連論文

• A Thermal Conductivity Measmement Method for Electricity Nonconducting Thin Films Based on Radiation Heat Exchange
• Thermal Conductivity of Diamond Films Synthesized by Microwave Plasma CVD
• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
• Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Positron Annihilation in Proton Irradiated Czochralski-Grown Si
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
• Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
• The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Amorphization Processes and Structural Relaxation in Ion Implanted Si
• Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
• Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
• Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
• Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
• Positron Annihilation in Vitreous Silica Glasses
• Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
• Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
• Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
• Vacancy-Type Defects in Be-Implanted InP
• Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
• Evaluation of SOI Substrates by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
• Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
• Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
• Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
• Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
• Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications)
• Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
• Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
• Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
• Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
• Positron Study of Electron Momentum Density and Fermi Surface in Titanium and Zirconium
• Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
• Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
• Study of Interactions of Hf and SiO2 Film for High-$k$ Materials
• Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
• Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
• Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
• Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
• Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam

もっと見る 閉じる

スポンサーリンク