The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-11-15

著者

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• Cho Y‐k

  Univ. Tsukuba Ibaraki

• Cho Yang-koo

  Institute Of Materials Science University Of Tsukuba:(present Address)korea Standards Institute

• Cho Yang-koo

  Institute Of Materials Science University Of Tsukuba:(present Address)korea Research Institute)

• WEI Long

  Institute of Materials Science, University of Tsukuba

• DOSHO Chisei

  Institute of Materials Science, University of Tsukuba

• Wei L

  Institute Of Materials Science University Of Tsukuba

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Dosho Chisei

  Institute Of Materials Science University Of Tsukuba

• KURIHARA Toshikazu

  Institute of Materials Science, University of Tsukuba

• Kurihara Toshikazu

  Institute Of Materials Science University Of Tsukuba

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

関連論文

• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
• Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Positron Annihilation in Proton Irradiated Czochralski-Grown Si
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
• The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Amorphization Processes and Structural Relaxation in Ion Implanted Si
• Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
• Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
• Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
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• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
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• Positron Annihilation in Vitreous Silica Glasses
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• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
• Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
• Vacancy-Type Defects in Be-Implanted InP
• Evaluation of SOI Substrates by Positron Annihilation
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• The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
• Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
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• Stable, High-Efficiency Moderator with Tungsten Mesh
• Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
• Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
• Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
• Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
• Positron Study of Electron Momentum Density and Fermi Surface in Titanium and Zirconium
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam

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