Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The addition of impurities such as Be and Si during the epitaxial growth of GaAs on Si substrate by molecular beam epitaxy caused the reduction of dislocation density. This was demonstrated by the depth distribution of vacancy-type defects obtained from slow positron measurements and by etch pit observation. The slow positron beam results indicate that impurities, Si and Be, increase concentrations of Ga vacancies and interstitials in the grown GaAs, respectively. The results suggest that these defects assist the enhanced dislocation climb, resulting in the reduction of dislocation density in impurity-doped GaAs.
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Lee Jong-Lam
Institute of Materials Science, University of Tsukuba
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Lee Jong-lam
Institute Of Materials Science University Of Tsukuba:(present Address)electronics And Telecommunicat
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Lee Jong-lam
Institute Of Materials Science University Of Tsukuba:electronics And Telecommunications Research Ins
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KOBAYASHI Hidetoshi
Institute of Materials Science, University of Tsukuba
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Kobayashi Hidetoshi
Institute Of Materials Science University Of Tsukuba
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