Composition Control of Al_xGa_<1-x>As and New Type of Superlattice by Pulsed Molecular Beam
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-07-20
著者
-
Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
-
Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
-
MATSUURA Nobuyuki
Institute of Materials Science, University of Tsukuba
-
INUZUKA Hajime
Institute of Materials Science, University of Tsukuba
-
Matsuura Nobuyuki
Institute Of Materials Science University Of Tsukuba
-
Inuzuka Hajime
Institute Of Materials Science University Of Tsukuba:(present Address) Faculty Of Engineering Tokyo
関連論文
- Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
- Comparison of Optical Properties of In_Ga_As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells
- Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
- Effect of Charge Distribution in Quantum Dots Array on Two-Dimensional Electron Gas
- Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
- The Procedure to Realize Two-Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays
- High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications
- Anisotropic Transport Properties in Twin-Free Bi_2Sr_2CaCu_2O_x Thin Films on Tilted LaAlO_3 (001) Substrates
- Composition Control of Al_xGa_As and New Type of Superlattice by Pulsed Molecular Beam
- Surfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InP
- Enhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
- Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
- Cracking Efficiency of Hydrogen with Tungsten Filament in Molecular Beam Epitaxy
- Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
- GaAs/AlGaAs Quantum Wells Grown by Low-Temperature Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
- Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
- Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE
- Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen FluX Modulation in RF Molecular Beam Epitaxy : Semiconductors
- Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
- Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
- Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
- Array of the Self-Organized InGaAs Quantum Dots on GaAs (311)B Substrates by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
- Anisotropic Lateral Growth of GaAs by Molecular Beam Epitaxy
- A Molecular Beam Epitaxy Approach to Quantum Dot Arrays
- Fabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxy
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- Effect of Atomic Hydrogen on GaAs Growth on GaAs(311)A Substrate in Molecular Beam Epitaxy
- Formation of High-Density Quantum Dot Arrays by Molecular Beam Epitaxy ( Quantum Dot Structures)
- Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
- Surface Diffusion of Bi_2Sr_2CuO_ Thin Films Grown by Molecular Beam Epitaxy
- Bi_2Sr_2CuO_x Thin Films with (011) Vicinal Surfaces Fabricated on Vicinal LaSrGaO_4(110) by Molecular Beam Epitaxy
- Two-Dimensional Epitaxial Growth of Bi_2Sr_2CuO_x on Tilted SrTiO_3(001) Substrates Studied by Reflection High Energy Electron Diffraction
- Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
- Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation
- Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
- Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
- Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Be Doping Effect on Growth Kinetics of GaAs Grown by MBE
- Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
- Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- Preferential Desorption of Ga from Al_xGa_As Grown by Molecular Beam Epitaxy
- Effect of AlAs Buffer Layers on Epitaxial Growth of GaAs on Si (100)
- Photoluminescence of Al_xGa_As/Al_yGa_As Multiguantum Wells Grown by Pulsed Molecular Beam Epitaxy
- Self-Organization of High-Density III-V Quantum Dots on High-Index Substrates
- Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
- Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
- Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
- Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
- Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy
- Elementary Processes in Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
- Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen
- Atomic Image Observation of Hydrogen-Saturated Si(100) Prepared by Atomic Hydrogen Irradiation
- Selective Growth of GaAs by Molecular Beam Epitaxy
- Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si
- Fermi Level Effect on Compositional Disordering of AlAs/GaAs Superlattice
- Growth of InGaAs Quantum Dots on the AlGaAs(311)B Surface