Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
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概要
- 論文の詳細を見る
Single domain GaAs layers have been grown on Si (100) surface by molecular beam epitaxy. RHEED observation indicates that antiphase disorder could be suppressed by tilting the orientation of Si (100) surface around (110) axis but were unavoidable on just (100) surface. The off-axis substrates also improve the surface morphology.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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UEDA Toshio
Institute of Materials Science, University of Tsukuba
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Ueda Toshio
Institute Of Materials Science University Of Tsukuba
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