4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-04-15

著者

• Kawabe Mitsuo

  Institute Of Materials Science University Of Tsukuba

• Kawabe Mitsuo

  Institute Of Applied Physics University Of Tsukuba

• Kumagai Y

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Mori Ryosuke

  Institute Of Materials Science University Of Tsukuba

• Kumagai Y

  Hitachi Ltd. Ibaraki Jpn

• Kumagai Yoshinao

  Institute Of Materials Science University Of Tsukuba

• ISHIMOTO Kouichi

  Institute of Materials Science, University of Tsukuba

• TEE Keh-Ming

  Institute of Materials Science, University of Tsukuba

• ISHIBASHI Takayuki

  Institute of Materials Science, University of Tsukuba

• Ishibashi Takayuki

  Institute Of Materials Science University Of Tsukuba

• Ishibashi Takayuki

  Institute Of Materials Science University Of Tsukuba:(present Address) Faculty Of Technology Tokyo U

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Mori R

  Nagaoka Univ. Technol. Nagaoka Jpn

• Tee Keh-ming

  Institute Of Materials Science University Of Tsukuba

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Ishimoto Kouichi

  Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.

• KUMAGAI Yoshinao

  Institute of Material Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

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