Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-09-15
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Kobayashi Y
Tokai Univ. Kanagawa Jpn
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Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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Kobayashi Y
Ntt Basic Research Lab. Kanagawa
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Kobayashi Y
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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KUMAGAI Yoshinao
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kumagai Y
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Taki Tetsuya
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Taki Tetsuya
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Taki Tetsuya
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki H
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Koukitsu Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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