Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
スポンサーリンク
概要
- 論文の詳細を見る
Thermodynamic analysis of coherently grown GaAs<inf>1-x</inf>N<inf>x</inf>on Ge with low N content was performed to determine the relationship between solid composition and growth conditions. In this study, a new algorithm for the simulation code, which is applicable to wider combinations of gaseous sources than the traditional algorithm, was developed to determine the influence of different gaseous sources on N incorporation. Using this code, here we successfully compared two cases: one is a system using trimethylgallium (TMG), AsH<inf>3</inf>, and NH<inf>3</inf>, and the other uses dimethylhydrazine (DMHy) instead of NH<inf>3</inf>. It was found that the optimal N/As ratio of input gas in the system using DMHy was much lower than that using NH<inf>3</inf>. This shows that the newly developed algorithm could be a useful tool for analyzing the N incorporation during the vapor growth of GaAs<inf>1-x</inf>N<inf>x</inf>.
- 2013-04-25
著者
-
Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
-
Kakimoto Koichi
Research Instittue For Applied Mechanics Kyushu University
-
Kangawa Yoshihiro
Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
-
Kawano Jun
Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
-
Yayama Tomoe
Department of Aeronautics and Astronautics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
-
Kakimoto Koichi
Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
関連論文
- 横磁場印加シリコンCZ炉内の熱流体解析(Si系単結晶・多結晶)
- Nonlinear Magneto-Optical Studies of Magnetic Nano Structures Fabricated by Damascene Technique Using Electron Beam Lithography
- Numerical analysis of impurity transport in a unidirectional solidification furnace for multicrystalline silicon (特集 太陽電池材料の結晶工学--結晶成長を中心に)
- Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon(Condensed Matter: Structure, Mechanical and Thermal Properties)
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- Growth of a NdBaCuO Superconducting Thin Film on a MgO Substrate by Mist Microwave-Plasma Chemical Vapor Deposition Using a CeO_2 Buffer Layer
- Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides
- Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
- Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN
- Investigation of Arsenic Desorption from GaAs (111) B Surface in Atmospheric Pressure Atomic Layer Epitaxy
- Growth of InN at High Temperature by Halide Vapor Phase Epitaxy
- Vapor Phase Epitaxy of In_xGa_N Using InCl_3, GaCl_3 and NH_3 Sources
- Growth of NdBaCu0 Superconducting Thin Films Using Mist Microwave-Plasma Chemical Vapor Deposition with Dual Sources
- In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer Epitaxy
- Thermodynamic Analysis of In_xGa_N Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy
- Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100)GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy
- New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH_3)_3Ga, HCl and NH_3
- Influence of Sr Content on Tl-Ba-Sr-Ca-Cu-O Superconducting Thin Films Prepared by the Mist Microwave-Plasma Chemical Vapor Deposition Method
- Preparation of Tl-Systerm Superconducting Thin Films by the Mist Microwave-Plasma Chermical Vapor Deposition Method
- Numerical Analysis of a TMCZ Silicon Growth Furnace by Using a 3D Global Model
- Solid Composition of In_Ga_xAs Grown by the Halogen Transport Atomic Layer Epitaxy : Condensed Matter
- Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AIN
- Thermodynamical Analysis of AlGaInP Vapor Growth
- Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method
- Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy
- Thermodynamic Calculation of the VPE Growth of In_Ga_xAs_yP_ by the Trichloride Method
- Growth and Thermodynamic Analysis of Atomic Layer Epitaxy of ZnS_xSe_
- In Situ Gravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy
- In Situ Monitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method
- Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H_2 Se
- Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy
- Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
- Halide Vapor Phase Epitaxy of Mg_xZn_O Layers on Zn-Polar ZnO Substrates
- In Situ Observation of Halogen-Transport Atomic Layer Epitaxy of GaAs in Inert Carrier Gas System
- Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface
- In Situ Optical Monitoring of Hydrogen Chemisorption on the GaAs(111)B Ga Surface
- Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources
- The VPE Growth of GaAs by the Pulsed Introduction of H_2 : Condensed Matter
- Preparation of (Tl, Pb)-Sr-Ca-Cu-O Superconducting Thin Films by the Mist Microwave-Plasma Chemical Vapor Deposition Method
- Thermodynamic Calculation of the VPE Growth of In_Ga_xAs by the Trichloride Method
- Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ Gravimetric Monitoring
- Preparation of (Bi, Pb)-Sr-Ca-Cu-O Superconducting Thin Films by the Mist Microwave-Plasma Chemical Vapor Deposition Method
- Preparation of Y-Ba-Cu-O Superconducting Thin Films by the Mist Microwave Plasma Decomposition Method
- Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl_3 and AsH_3 System : Condensed Matter
- Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen
- Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers
- Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
- N Substitution in GaAs(001) Surface under an Atmosphere of Hydrogen
- Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation
- Solid Composition Control of MgxZn1-xO in Halide Vapor Phase Epitaxy
- Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
- Possibility of AlN Solution Growth Using Al and Li3N
- Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
- Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
- Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of InxGa1-xN Film and Input Mole Ratio during Molecular Beam Epitaxy
- Enhancement of Boron Diffusion in Silicon by Continuous Wave CO2 Laser Irradiation
- Effect of the Inclusion of Transparency on the Thermal Field and Interface Shape in Long-term Sublimation Growth of SiC Crystals()Opening Up a New World of Crystal Growth on SiC)
- Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
- Effect of High NH
- Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal--Organic Vapor Phase Epitaxy
- High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H
- High Temperature Ramping Rate for GaAs (111)A Substrate Covered with a Thin GaN Buffer Layer for Thick GaN Growth at 1000°C
- Effect of High NH₃ Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (Special Issue : Recent Advances in Nitride Semiconductors)
- Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
- Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport
- Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films