Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation
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概要
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We carried out the molecular dynamics simulation of the solution growth of GaN and investigated the growth processes on Ga- and N-faces. An empirical potential function of the Brenner potential was used for the simulations. The simulation cell consisted of GaN substrates with Ga- and N-faces and Ga solution including N atoms. The results showed that the growth surface on the Ga-face laterally developed from a two-dimensional nucleus and became flat. On the other hand, the growth surface on the N-face developed by adhesive growth and became rough.
- 2012-01-25
著者
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Kakimoto Koichi
Research Instittue For Applied Mechanics Kyushu University
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SUZUKI Yasuyuki
Graduate School of Science and Engineering, Shizuoka University
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Kotake Shigeo
Graduate School of Engineering, Mie University, Tsu 514-8507, Japan
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Kawamura Takahiro
Graduate School of Engineering, Mie University, Tsu 514-8507, Japan
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Kangawa Yoshihiro
Research Institute of Applied Physics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Kangawa Yoshihiro
Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Suzuki Yasuyuki
Graduate School of Engineering, Mie University, Tsu 514-8507, Japan
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Kakimoto Koichi
Research Institute of Applied Physics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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