Numerical analysis of impurity transport in a unidirectional solidification furnace for multicrystalline silicon (特集 太陽電池材料の結晶工学--結晶成長を中心に)
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概要
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For accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was implemented. Both the gas flow and silicon melt flow were considered. Five chemical reactions were included during the transportation of impurities. The simulation results show good agreement with experimental data.
著者
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Nakano Satoshi
Research Institute for Applied Mechanics, Kyushu University
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Kakimoto Koichi
Research Institute for Applied Mechanics, Kyushu University
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Nakano Satoshi
Kyushu Univ. Fukuoka Jpn
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Gao Bing
Research Institute For Applied Mechanics Kyushu University
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Kakimoto Koichi
Research Institute For Applied Mechanics Kyushu University
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Kakimoto Koichi
Research Instittue For Applied Mechanics Kyushu University
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Gao Bing
九州大学応用力学研究所
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Nakano Satoshi
Research Institute For Applied Mechanics Kyushu University
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