Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources

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概要

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• Thermodynamic analysis of coherently grown GaAs<inf>1-x</inf>N<inf>x</inf>on Ge with low N content was performed to determine the relationship between solid composition and growth conditions. In this study, a new algorithm for the simulation code, which is applicable to wider combinations of gaseous sources than the traditional algorithm, was developed to determine the influence of different gaseous sources on N incorporation. Using this code, here we successfully compared two cases: one is a system using trimethylgallium (TMG), AsH<inf>3</inf>, and NH<inf>3</inf>, and the other uses dimethylhydrazine (DMHy) instead of NH<inf>3</inf>. It was found that the optimal N/As ratio of input gas in the system using DMHy was much lower than that using NH<inf>3</inf>. This shows that the newly developed algorithm could be a useful tool for analyzing the N incorporation during the vapor growth of GaAs<inf>1-x</inf>N<inf>x</inf>.

• The Japan Society of Applied Physicsの論文
• 2013-04-25

著者

• Koukitu Akinori

  Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology

• Kakimoto Koichi

  Research Instittue For Applied Mechanics Kyushu University

• Kangawa Yoshihiro

  Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Kawano Jun

  Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Yayama Tomoe

  Department of Aeronautics and Astronautics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

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