In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-07-01
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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Kobayashi Y
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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KUMAGAI Yoshinao
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kumagai Y
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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MAYUMI Miho
Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technolo
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SATOH Fumitaka
Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technolo
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Mayumi Miho
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Satoh Fumitaka
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Mayumi M
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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