Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-09-15

著者

• Kumagai Y

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Mori Ryosuke

  Institute Of Materials Science University Of Tsukuba

• PARK Kang-Ho

  Basic Research Laboratory, Electronics and Telecommunications Research Institute

• Park Kang-ho

  Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.

• Park Kang-ho

  Telecommunication Basic Research Laboratory

• Park Kang-ho

  Basic Research Laboratory Electronics And Telecommunications Research Institute

• Kumagai Y

  Hitachi Ltd. Ibaraki Jpn

• Kumagai Yoshinao

  Institute Of Materials Science University Of Tsukuba

• ISHIMOTO Kouichi

  Institute of Materials Science, University of Tsukuba

• PARK Kyung-ho

  Texas Instruments Tsukuba Research & Development Center Ltd.

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Park K‐h

  Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.

• Mori R

  Nagaoka Univ. Technol. Nagaoka Jpn

• Park Kyung-ho

  Texas Instruments Inc.

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Ishimoto Kouichi

  Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.

• KUMAGAI Yoshinao

  Institute of Material Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

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