Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of InxGa1-xN Film and Input Mole Ratio during Molecular Beam Epitaxy
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概要
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Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition $x$ of InxGa1-xN films and input mole ratio $R_{\text{In}}$ ($=P_{\text{In}}^{0}/(P_{\text{In}}^{0}+P_{\text{Ga}}^{0})$, where $P_{i}^{0}$ is the input partial pressure of element $i$) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward $x\sim 0.10$ for InGaN on InN and toward $x\sim 0.80$ for InGaN on GaN compared with $x\sim 0.50$ for stress-free InGaN.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-01
著者
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Ito Tomonori
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kawaguchi Norihito
Technical Development And Engineering Center Ishikawajima-harima Heavy Industries Co. Ltd.
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Koukitu Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kangawa Yoshihiro
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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Ito Tomonori
Department of Physics Engineering, Mie University, Tsu, Mie 514-8507, Japan
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