Stability of Magnesium-Incorporated Semipolar GaN($10\bar{1}\bar{1}$) Surfaces

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概要

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• The stability of Mg-incorporated GaN surfaces with semipolar ($10\bar{1}\bar{1}$) orientation is investigated by performing first-principles pseudopotential calculations. Several Mg-incorporated surfaces, in which a single Mg atom is substituted for the topmost Ga atom, can be formed when the surfaces include step edges in the [$0\bar{1}00$] direction. This implies that on the stepped surfaces Mg atoms can be easily incorporated into electrically active substitutional lattice sites, leading to high hole concentrations. The calculated results provide a possible explanation for experimentally observed high hole concentrations in Mg-doped semipolar ($10\bar{1}\bar{1}$) GaN on vicinal (100) MgAl2O4 substrates miscut in the $\langle 011\rangle$ direction.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-11-25

著者

• Akiyama Toru

  Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo

• Nakamura Kohji

  Department Of Dermatology Hiroshima University School Of Medicine

• Ito Tomonori

  Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University

• Ammi Daisuke

  Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

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