AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Akiyama Toru
Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo
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Ito Tomonori
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
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Eryu Osamu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Goriki Naoki
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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