Stability and Indium Incorporation Processes on In0.25Ga0.75N Surfaces under Growth Conditions: First-Principles Calculations

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概要

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• The structural stability and indium incorporation on In0.25Ga0.75N surfaces for various orientations are studied on the basis of first-principles total-energy calculations. The calculated surface phase diagrams as functions of temperature and pressure demonstrate that the (0001) and ($2\bar{2}01$) surfaces with bulk In concentration of 25% are stabilized for low temperature growth conditions. In contrast, the ($1\bar{1}00$) surface forms topmost Ga–N dimers over the wide range of growth conditions, and Ga atoms are preferentially adsorbed on the ($1\bar{1}00$) surfaces. These results imply that InGaN with In concentrations of ${\sim}25$% can be grown on $c$-plane and semipolar ($2\bar{2}01$) orientations.

• 2010-03-25

著者

• Akiyama Toru

  Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo

• Nakamura Kohji

  Department Of Dermatology Hiroshima University School Of Medicine

• Toru Akiyama

  Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Yamashita Tomoki

  Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

• Tomonori Ito

  Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

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