Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
スポンサーリンク
概要
- 論文の詳細を見る
A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
-
Akiyama Toru
Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo
-
Kageshima Hiroyuki
Ntt Basic Research Laboratories
-
Uematsu Masahi
Ntt Basic Research Laboratories Ntt Corporation
-
Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
-
Uematsu Masahi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Shiraishi Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
-
Akagi Kazuto
Graduate School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan
-
Tsuneyuki Shinji
Graduate School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan
関連論文
- Juxtacortical chondroma of the sacrum
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Empirical Potential Approach to the Formation of 3C-SiC/Si(110)
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires
- Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
- Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
- Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- 1P182 Theoretical Investigation into Proton Transfer Mechanism Involving Peptide Bonds(5. Heme protein,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- S1f1-7 Theoretical approaches for protein function(S1-f1: "Structural chemical studies on physiological functions of proteins",Symposia,Abstract,Meeting Program of EABS & BSJ 2006)
- 2P-065 タンパク質内環境下における新しいpKaの第一原理計算による提案(蛋白質・構造機能相関(2),第46回日本生物物理学会年会)
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
- Atomistic Design of Guiding Principles for High Quality Metal--Oxide--Nitride--Oxide--Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers
- Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
- A Method for Calculating Momentum Matrix Elements with Pseudopotentials
- Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
- First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Stability of Carbon Incorpoated Semipolar GaN($1\bar{1}01$) Surface
- Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
- Electronic structure study of local dielectric properties of lanthanoid oxide clusters
- Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
- Theoretical Study of the Time-Dependent Phenomena on a Two-Dimensional Electron Gas Weakly Coupled with a Discrete Level
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Stability and Indium Incorporation Processes on In0.25Ga0.75N Surfaces under Growth Conditions: First-Principles Calculations
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Reconstructions on AlN Polar Surfaces under Hydrogen Rich Conditions
- Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
- Reconstructions on AlN Nonpolar Surfaces in the Presence of Hydrogen
- Multi-Electron Wave Packet Dynamics in Applied Electric Field
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
- Ab initio-Based Study for Adatom Kinetics on Semipolar GaN($11\bar{2}2$) Surfaces
- First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
- Reconstructions of GaN and InN Semipolar ($10\bar{1}\bar{1}$) Surfaces
- Surface Reconstructions on GaN and InN Semipolar ($11\bar{2}2$) Surfaces
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- Study on Thermoelectric Properties of Graphene
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
- Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures
- An Empirical Interatomic Potential Approach to Structural Stability of ZnS and ZnSe Nanowires
- Effects of Facet Orientation on Relative Stability between Zinc Blende and Wurtzite Structures in Group III–V Nanowires
- Oxygen Trap Hypothesis in Silicon Oxide
- Theoretical Investigation of Effect of Side Facets on Adsorption--Desorption Behaviors of In and P Atoms at Top Layers in InP Nanowires
- Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
- Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
- Examination of short calibration problem of Transmission Line Pulse
- Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
- Origin of Schottky Barrier Modification by Hydrogen on Diamond
- First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule
- The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model
- Simple Systematization of Structural Stability for ANB8-N Compounds
- Stability of Magnesium-Incorporated Semipolar GaN($10\bar{1}\bar{1}$) Surfaces
- Surface Reconstructions on GaN and InN Semipolar ($20\bar{2}1$) Surfaces
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- Neoadjuvant and adjuvant chemotherapy with modified mesna, adriamycin, ifosfamide, and dacarbazine (MAID) regimen for adult high-grade non-small round cell soft tissue sarcomas
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio