Atomistic Design of Guiding Principles for High Quality Metal--Oxide--Nitride--Oxide--Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers
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概要
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We theoretically investigate H- and O-incorporation effects on memory characteristics of N vacancies in the SiN layer of metal--oxide--nitride--oxide--semiconductor (MONOS) type memory. The present calculations show that N vacancy maintains high program/erase (P/E) cycle endurance characteristics, regardless of the existence of H and O atoms. It is also found that the incorporation of an H atom is energetically favorable for N vacancy, whereas the incorporation of such an atom is unfavorable for O-incorporated N vacancy. The present results indicate clearly that realistic process conditions, in which incorporation of H and O atoms is inevitable, do not affect memory characteristic of MONOS-type memory having N vacancies in the SiN layer, and, therefore, such a memory is desirable and feasible for future memories.
- 2011-04-25
著者
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Yamaguchi Keita
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Otake Akira
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Shigeta Yasuteru
Graduate School Of Engineering Science Osaka University
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Kamiya Katsumasa
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Otake Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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