State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO

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概要

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• Dynamic fluctuation in stress-induced leakage current --- called ``variable stress-induced leakage current'' --- in a gate oxide of a metal--oxide--semiconductor structure was investigated. Variable stress-induced leakage current is attributed to random telegraph noise, which is associated with the state-transition of a single defect. To analyze the mechanism of the state-transition, dependence of state-transition probabilities on gate current and on temperature were investigated. These dependences indicate that the state-transition mechanism is a defect-structure transition by charge collision.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• Torii Kazuyoshi

  Central Research Laboratory Hitachi Lid.

• Mine Toshiyuki

  Central Research Laboratory Hitachi Ltd

• Kume Hitoshi

  Central Research Laboratory

• Shiraishi Kenji

  Graduate School Of Applied Physics Univ Of Tsukuba

• Miki Hiroshi

  Central Research Laboratory Hitachi Limited

• Ishida Takeshi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Mori Yuki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Tega Naoki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Yamada Ren-ichi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

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