An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
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概要
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Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.
- 2011-05-01
著者
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Otake Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Yamaguchi Keita
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Otake Akira
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shigeta Yasuteru
Institute For Picobiology Graduate School Of Life Science Univ Of Hyogo
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Kamiya Katsumasa
Institute For Picobiology Graduate School Of Life Science Univ Of Hyogo
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Shigeta Yasuteru
Graduate School Of Engineering Science Osaka University
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KAMIYA Katsumasa
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Kamiya Katsumasa
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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