2P-065 タンパク質内環境下における新しいpKaの第一原理計算による提案(蛋白質・構造機能相関(2),第46回日本生物物理学会年会)
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概要
- 論文の詳細を見る
- 日本生物物理学会の論文
- 2008-10-25
著者
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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Tanaka Tomonori
Graduate School Of Applied Physics Univ Of Tsukuba
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Kamiya Katsumasa
Institute for Picobiology, Graduate School of Life Science, Univ of Hyogo
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Shigeta Yasuteru
Institute for Picobiology, Graduate School of Life Science, Univ of Hyogo
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Shiraishi Kenji
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shigeta Yasuteru
Institute For Picobiology Graduate School Of Life Science Univ Of Hyogo
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Kamiya Katsumasa
Institute For Picobiology Graduate School Of Life Science Univ Of Hyogo
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
関連論文
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- 1P182 Theoretical Investigation into Proton Transfer Mechanism Involving Peptide Bonds(5. Heme protein,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- S1f1-7 Theoretical approaches for protein function(S1-f1: "Structural chemical studies on physiological functions of proteins",Symposia,Abstract,Meeting Program of EABS & BSJ 2006)
- 2P-065 タンパク質内環境下における新しいpKaの第一原理計算による提案(蛋白質・構造機能相関(2),第46回日本生物物理学会年会)
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
- Atomistic Design of Guiding Principles for High Quality Metal--Oxide--Nitride--Oxide--Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers
- Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
- Electronic structure study of local dielectric properties of lanthanoid oxide clusters
- Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Electronic Structures of Polyglycine and Active Sites of Cytochrome c Oxidase(Cross-disciplinary Physics and Related Areas of Science and Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
- Theoretical Study of the Time-Dependent Phenomena on a Two-Dimensional Electron Gas Weakly Coupled with a Discrete Level
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
- Multi-Electron Wave Packet Dynamics in Applied Electric Field
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures
- Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al
- Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel
- Examination of short calibration problem of Transmission Line Pulse
- Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure