Shiraishi Kenji | Graduate School Of Applied Physics Univ Of Tsukuba

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概要

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著作論文

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
1P182 Theoretical Investigation into Proton Transfer Mechanism Involving Peptide Bonds(5. Heme protein,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
S1f1-7 Theoretical approaches for protein function(S1-f1: "Structural chemical studies on physiological functions of proteins",Symposia,Abstract,Meeting Program of EABS & BSJ 2006)
2P-065 タンパク質内環境下における新しいpKaの第一原理計算による提案(蛋白質・構造機能相関(2),第46回日本生物物理学会年会)
Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
Atomistic Design of Guiding Principles for High Quality Metal--Oxide--Nitride--Oxide--Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers
Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
Electronic structure study of local dielectric properties of lanthanoid oxide clusters
Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Theoretical Study of the Time-Dependent Phenomena on a Two-Dimensional Electron Gas Weakly Coupled with a Discrete Level
Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
Multi-Electron Wave Packet Dynamics in Applied Electric Field
Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures
Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al
Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel
Examination of short calibration problem of Transmission Line Pulse
Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure

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