Iwai Hiroshi | Frontier Collaborative Research Center Tokyo Institute Of Technology
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概要
関連著者
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Natori Kenji
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Hattori Takeo
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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IWAI Hiroshi
Frontier Research Center, Tokyo Institute of Technology
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Nishiyama Akira
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Kakushima Kuniyuki
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Ohmori Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Tsutsui Kazuo
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Hattori Takeo
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Yamada Keisaku
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sato Soshi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Koyanagi Tomotsune
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamashita Koji
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Nohira Hiroshi
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Wu Yan
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Dou Chunmeng
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Wei Feng
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kataoka Yoshinori
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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WATANABE Masato
Tokyo Institute of Technology
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IWAI Hiroshi
Tokyo Institute of Technology
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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Geni Mamtimin
School Of Mechanical Engineering Xinjiang University
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Tachibana Akitomo
Department Of Engineering Physics And Mechanics Kyoto University
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KOBAYASHI Yusuke
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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MANOJ C.
Dept. of Electrical Engineering, Indian Institute of Technology
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TSUTSUI Kazuo
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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HARIHARAN Venkanarayan
Dept. of Electrical Engineering, Indian Institute of Technology
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KAKUSHIMA Kuniyuki
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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RAO V.
Dept. of Electrical Engineering, Indian Institute of Technology
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CHIKYO Toyohiro
National Institute for Material Science
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Taguchi Junichi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ohmi Shun-ichiro
Department Of Information Processing Interdisciplinary Graduate School Of Science And Engineering To
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KIM Yongshik
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
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KURIYAMA Atsushi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Hariharan Venkanarayan
Dept. Of Electrical Engineering Indian Institute Of Technology
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Sato Takahisa
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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TONOTANI Junichi
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Tonotani J
Corporate Manufacturing Engineering Center Toshiba Corporation
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Tonotani Junichi
Corporate Manufacturing Engineering Center Toshiba Corporation
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Doi Kentaro
Department Of Applied Physics And Chemistry The University Of Electro-communications
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YAMAMOTO Hiroyuki
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Kim Yongshik
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Mizuno Bunji
Ultimate Junction Technologies Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Kobayashi Yusuke
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Rao V.
Dept. Of Electrical Engineering Indian Institute Of Technology
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Manoj C.
Dept. Of Electrical Engineering Indian Institute Of Technology
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Iwai Hiroshi
Frontier Research Center Tokyo Institute Of Technology
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Yamamoto Hiroyuki
Frontier Collaborative Research Center Tokyo Institute Of Technology
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KAKUSHIMA Kuniyuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, Tokyo 169-0041, Japan
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Feng Wei
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hettiarachchi Ranga
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Niwa Masaaki
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tachi Kiichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Okamoto Kouichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ohmi Shun-ichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Tsutsui Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Zade Dariush
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kanda Takashi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Numajiri Yuuya
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Song Jaeyeol
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Iwai Hiroshi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Iwai Hiroshi
Frontier Research Center Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Mikazuki Yutaka
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Sugino Shinya
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Doi Tatsuki
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Szarek Pawel
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Senami Masato
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Mizuno Bunji
Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Tokyo 169-8555, Japan
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Sasaki Yuichiro
Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan
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Watanabe Masato
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Sato Takahisa
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Higaki Ryota
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Tamura Hideki
Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan
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Okashita Katsumi
Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan
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Niwa Masaaki
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Chikyo Toyohiro
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Kouda Miyuki
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kitayama Daisuke
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kubota Toru
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Abudukelimu Abudureheman
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yasenjiang Wufuer
School of Mechanical Engineering, Xinjiang University, 1234 Yananlu, Urumqi 830047, China
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OHMORI Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba
著作論文
- Future perspective for the mainstream CMOS technology and their contribution to green technologies(Plenary Session 2)
- Future perspective for the mainstream CMOS technology and their contribution to green technologies(Plenary Session 2)
- Parasitic Effects in Multi-Gate MOSFETs(Integrated Electronics)
- Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
- Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
- Dry Etching of Cr_2O_3/Cr Stacked Film during Resist Ashing by Oxygen Plasma
- Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Electronic structure study of local dielectric properties of lanthanoid oxide clusters
- Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
- Effects of scattering direction of hot electrons in the drain of ballistic n[+]-i-n[+] diode
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
- Advantages of Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties
- Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping
- Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
- Study of High-\kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy
- Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
- Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)