Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Ahmet Parhat

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Tsutsui Kazuo

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Iwai Hiroshi

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Natori Kenji

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Hattori Takeo

  Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Koyanagi Tomotsune

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Nishiyama Akira

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Kakushima Kuniyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Sugii Nobuyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Kitayama Daisuke

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Kubota Toru

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

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