Effects of the Two-Step Growth Method for GaAs Grown on CaF_2/Si(111) with the Electron Beam Surface Modification Technique
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概要
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Effects of the two-step growth method were investigated in epitaxial growth of the GaAs layer on the CaF_2/Si(111) substrate, where the CaF_2 surface was modified by the electron beam exposure technique. In-situ optical observation of the initial stage of GaAs growth revealed that sticking coefficient of GaAs on the CaF_2 was low and GaAs grew with a three-dimensional growth mode at 550℃ or higher, while the sticking coefficient was increased and GaAs grew with a two-dimensional mode at 500℃ or lower. The GaAs layer with good surface morphology without a twin boundary was obtained by the two-step growth method in which the initial layer was grown at less than 500℃ and the succeeding layer was grown at 600℃. X-ray full-width at half maximum (FWHM) of 400 arcsec and Hall mobility of electrons more than 2,300 cm^2/Vs were obtained in a 1.5-μm-thick GaAs layer grown by the two-step growth method.
- 社団法人応用物理学会の論文
- 1999-03-15
著者
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Kawasaki Koji
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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