Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
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概要
- 論文の詳細を見る
Ultrathin La2O3 films deposited on Ge substrates were characterized. The films were deposited by electron-beam evaporation in an ultrahigh vacuum system and were subjected to post-deposition annealing at various temperatures in N2 ambient. There was little interfacial layer growth at the interface of La2O3/Ge, which was confirmed by transmission electron microscopy and spectroscopic ellipsometry. Electrical measurements revealed that a small capacitance equivalent thickness of 1.48 nm with a leakage current density of $6 \times 10^{-7}$ A/cm2 at 1 V was achieved using a Pt/La2O3/Ge structure by post-deposition annealing at 600 °C. This result suggests that ultrathin La2O3 films can be grown on a Ge substrate by annealing at a sufficiently high temperature for activating the source and drain regions for a Ge metal–oxide–semiconductor field-effect transistor.
- Japan Society of Applied Physicsの論文
- 2007-04-25
著者
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Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Hattori Takeo
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Song Jaeyeol
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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