Kakushima Kuniyuki | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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概要
- Kakushima Kuniyukiの詳細を見る
- 同名の論文著者
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japanの論文著者
関連著者
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Natori Kenji
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Hattori Takeo
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Nishiyama Akira
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Ohmori Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hattori Takeo
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamada Keisaku
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sato Soshi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Koyanagi Tomotsune
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamashita Koji
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Nohira Hiroshi
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Wu Yan
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Dou Chunmeng
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Wei Feng
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kataoka Yoshinori
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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WATANABE Masato
Tokyo Institute of Technology
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Geni Mamtimin
School Of Mechanical Engineering Xinjiang University
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Chen Chi-ming
Department Of Applied Mathematics National Hsinchu University Of Education
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LIN Yueh-Chin
Department of Materials Science and Engineering, and Microelectronics and Information Systems Resear
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Chang Edward
Department Of Materials Science And Engineering National Chiao-tung University
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Chang Edward
Department Of Communications Engineering Yuan Ze University
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Wong Yuen-yee
Department Of Materials Science And Engineering National Chiao-tung University
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Wong Yuen-yee
Department Of Materials Science And Engineering National Chiao Tung University
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TRINH Hai-Dang
Department of Materials Science and Engineering, National Chiao-Tung University
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WANG Huan-Chung
Department of Materials Science and Engineering, National Chiao-Tung University
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CHANG Chia-Hua
Department of Materials Science and Engineering, National Chiao-Tung University
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KAKUSHIMA Kuniyuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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IWAI Hiroshi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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KAWANAGO Takamasa
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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LIN Yan-Gu
Department of Materials Science and Engineering, National Chiao-Tung University
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HUANG Guan-Ning
Department of Materials Science and Engineering, National Chiao-Tung University
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HUDAIT Mantu
Department of Electrical and Computer Engineering, Virginia Tech
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Lin Yan-gu
Department Of Materials Science And Engineering National Chiao-tung University
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Trinh Hai-dang
Department Of Materials Science And Engineering National Chiao-tung University
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Trinh Hai-dang
Department Of Materials Science And Engineering National Chiao Tung University
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Huang Guan-ning
Department Of Materials Science And Engineering National Chiao-tung University
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Kawanago Takamasa
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Wang Huan-chung
Department Of Materials Science And Engineering National Chiao-tung University
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Lin Yueh-chin
Department Of Materials Science And Engineering National Chiao-tung University
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Chang Chia-hua
Department Of Materials Science And Engineering National Chiao-tung University
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Hudait Mantu
Department Of Electrical And Computer Engineering Virginia Tech
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Feng Wei
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hettiarachchi Ranga
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Niwa Masaaki
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tachi Kiichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Okamoto Kouichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Tsutsui Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Zade Dariush
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kanda Takashi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Numajiri Yuuya
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Song Jaeyeol
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Iwai Hiroshi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Iwai Hiroshi
Frontier Research Center Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Tokyo 169-8555, Japan
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Watanabe Masato
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Niwa Masaaki
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Kouda Miyuki
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kitayama Daisuke
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kubota Toru
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Abudukelimu Abudureheman
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yasenjiang Wufuer
School of Mechanical Engineering, Xinjiang University, 1234 Yananlu, Urumqi 830047, China
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OHMORI Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba
著作論文
- Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
- Effects of scattering direction of hot electrons in the drain of ballistic n[+]-i-n[+] diode
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
- Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
- Advantages of Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties
- Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
- Study of High-\kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy
- Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)