Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability

スポンサーリンク

概要

• 論文の詳細を見る

• The influence of structural parameters, including the Schottky barrier height for electron (\phi_{\text{Bn}}) and channel doping (N_{\text{a}}), on the electrical characteristics of a scaled Schottky barrier tunneling FET (SBTFET) have been clarified by numerical device simulation. The thermionic emission current (I_{\text{TH}}) as well as the tunneling current (I_{\text{TN}}) have been considered as the main electron injections at the source edge. Simulation results have revealed that the main conduction is I_{\text{TN}} in the region near and above the threshold voltage (V_{\text{th}}). As tunneling probability is determined by \phi_{\text{Bn}} and the width of the triangular potential barrier at the source edge, a lower \phi_{\text{Bn}} with higher N_{\text{a}} results in a better subthreshold swing (SS) with high on-state drive current (I_{\text{ON}}) at a gate length (L_{\text{g}}) of 50 nm. With L_{\text{g}} scaling down to 10 nm, however, a lower \phi_{\text{Bn}} has shown an increased off-state leakage current (I_{\text{OFF}}) due to the short-channel effect (SCE), while a larger \phi_{\text{Bn}} can suppress the I_{\text{OFF}} at the cost of I_{\text{ON}}. Therefore, considering SS with I_{\text{ON}} and I_{\text{OFF}} ratio, it can be concluded that an optimum \phi_{\text{Bn}} exists for short-channel devices. The SBTFET showed good subthreshold performance and higher I_{\text{ON}}/I_{\text{OFF}} than the conventional silicon-on-insulator (SOI) MOSFET in 10 nm region with the Schottky barrier height optimization.

• 2013-04-25

著者

• Ahmet Parhat

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Yamada Keisaku

  Graduate School Of Pure And Applied Sciences University Of Tsukuba

• Tsutsui Kazuo

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Iwai Hiroshi

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Ohmori Kenji

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Natori Kenji

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Hattori Takeo

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Hattori Takeo

  Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Nishiyama Akira

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Ahmet Parhat

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Kakushima Kuniyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Sugii Nobuyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Watanabe Takanobu

  Institute for Nanoscience and Nanotechnology, Waseda University, Tokyo 169-8555, Japan

• Wu Yan

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Dou Chunmeng

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Wei Feng

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Kataoka Yoshinori

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Watanabe Takanobu

  Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 169-8555, Japan

関連論文

• Future perspective for the mainstream CMOS technology and their contribution to green technologies(Plenary Session 2)
• Future perspective for the mainstream CMOS technology and their contribution to green technologies(Plenary Session 2)
• Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes
• Parasitic Effects in Multi-Gate MOSFETs(Integrated Electronics)
• High-resolution RBS analysis of Si-dielectrics interfaces
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Fabrication of Optically Active Er^-Doped Bi_2O_3-SiO_2 Glass Thin Films by Pulsed Laser Deposition
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
• Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF_2 Film
• Multitunneling Junction of Metal Droplets Formed on CaF_2 Step Edges in a Self-Assembling Manner
• Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner
• Artificial Control of Dot Sites for Ga Droplet Arrays on CaF_2 Films by Surface Steps and Electron Beam Modifications ( Quantum Dot Structures)
• Site Control of Ga Droplet Array on CaF_2 by Surface Modification Using a Focused Electron Beam
• Site Control of Metal Droplet Formation on CaF_2 Surface Using a Focused Electron Beam
• Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
• Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
• Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry
• Dry Etching of Cr_2O_3/Cr Stacked Film during Resist Ashing by Oxygen Plasma
• Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry
• Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
• CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
• CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
• Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
• Electronic structure study of local dielectric properties of lanthanoid oxide clusters
• Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
• Effects of scattering direction of hot electrons in the drain of ballistic n[+]-i-n[+] diode
• Optical In Situ Observation of Electron Beam Induced Surface Modification of Epitaxial Fluoride Films
• Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
• Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs
• Epitaxial Growth of Ca_xCd_F_2 Mixed Crystal Films on Si Substrates
• Effects of the Two-Step Growth Method for GaAs Grown on CaF_2/Si(111) with the Electron Beam Surface Modification Technique
• Selective Growth of Wire Structures of GaAs on CaF_2 Usimg Focused Electron Beams
• Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates
• Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process
• Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
• Advantages of Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties
• Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping
• Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
• Study of High-\kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy
• Heteroepitaxy of Cd-Rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes
• Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
• Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
• Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
• Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
• Strain Distribution around SiO2/Si Interface in Si Nanowires: A Molecular Dynamics Study
• Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
• Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates
• Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel
• Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)

もっと見る 閉じる

スポンサーリンク