Site Control of Ga Droplet Array on CaF_2 by Surface Modification Using a Focused Electron Beam
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
-
Kawasaki K
Tokyo Inst. Technol. Yokohama Jpn
-
Kawasaki Koji
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Kawasaki Koji
Department Of Preventive And Community Dentistry Osaka Dental University
-
Kawasaki Koji
Department Of Electric And Electronic Engineering University Of Tokushima
-
TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
-
UEJIMA Kazuya
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
-
Uejima Kazuya
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Tsutsui K
Sony Corp. Tokyo Jpn
-
Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
関連論文
- Stitching Error Analysis in an Electron Beam Lithography System: Column Vibration Effect
- The Requirements for Future Elcetron-Beam Reticle Fabrication Systems from an Error Analysis Viewpoint
- Error Analysis in Electron Beam Lithography System : Thermal Effects on Positioning Accuracy
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes
- Cascade Fluorescences from Laser-Excited Lithium Atoms Immersed in a Static Electric Field for Plasma Diagnostics
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Evaluation of Fuzzy Regression Analysis and Its Application to Oral Age Model
- Comparison of DMFT index scores between Korean and Japanese population
- Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
- Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF_2 Film
- Multitunneling Junction of Metal Droplets Formed on CaF_2 Step Edges in a Self-Assembling Manner
- Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner
- Artificial Control of Dot Sites for Ga Droplet Arrays on CaF_2 Films by Surface Steps and Electron Beam Modifications ( Quantum Dot Structures)
- Site Control of Ga Droplet Array on CaF_2 by Surface Modification Using a Focused Electron Beam
- Site Control of Metal Droplet Formation on CaF_2 Surface Using a Focused Electron Beam
- Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing
- Forbidden Transitions of LiI in Laser-Induced Fluorescence Spectroscopy for the Measurement of Low-Frequency Electric Fields in Plasmas
- Thermal Desorption of ^NO Chemisorbed on Polycrystalline Rhenium Surfaces
- Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
- Effect of Post-Metallization Annealing on Electrical Characteristics of La_2O_3 Gate Thin Films
- Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
- Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
- Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
- Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry
- Effects of Electron Beam Exposure Conditions on the Surface Modification of CaF_2 (111) for Heteroepitaxy of GaAs/CaF_2 Structure
- Two-Dimensional Contact-Type Image Sensor Using Amorphous Silicon Photo-Transistor
- Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
- Optical In Situ Observation of Electron Beam Induced Surface Modification of Epitaxial Fluoride Films
- Adsorption of CO, O_2 and CO_2 on Titanium Film by Electrical Conductivity Measurements
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
- Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs
- Epitaxial Growth of Ca_xCd_F_2 Mixed Crystal Films on Si Substrates
- Effects of the Two-Step Growth Method for GaAs Grown on CaF_2/Si(111) with the Electron Beam Surface Modification Technique
- Selective Growth of Wire Structures of GaAs on CaF_2 Usimg Focused Electron Beams
- Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates
- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process
- Preventive effect of mouthwash for artificial incipient carious lesions
- Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping
- Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
- Heteroepitaxy of Cd-Rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes
- Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
- Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
- Straight and Smooth Etching of GaN $(1\bar{1}00)$ Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
- Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)