Effect of Post-Metallization Annealing on Electrical Characteristics of La_2O_3 Gate Thin Films
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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IWAI Hiroshi
Frontier Research Center, Tokyo Institute of Technology
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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KURIYAMA Atsushi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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