Parasitic Effects in Multi-Gate MOSFETs(Integrated Electronics)
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概要
- 論文の詳細を見る
In this paper, we have systematically investigated parasitic effects due to the gate and source-drain engineering in multi-gate transistors. The potential impact of high-K dielectrics on multi-gate MOSFETs (MuGFETs), such as FinFET, is evaluated through 2D and 3D device simulations over a wide range of proposed dielectric values. It is observed that introduction of high-K dielectrics will significantly degrade the short channel effects (SCEs), however a combination of oxide and high-K stack can effectively control this degradation. The degradation is mainly due to the increase in the internal fringe capacitance coupled with the decrease in gate-channel capacitance. From the circuit perspective, an optimum K value has been identified through mixed mode simulations. Further, as a part of this work, the importance of optimization of the shape of the spacer region is highlighted through full 3D simulations.
- 社団法人電子情報通信学会の論文
- 2007-10-01
著者
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IWAI Hiroshi
Tokyo Institute of Technology
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IWAI Hiroshi
Frontier Research Center, Tokyo Institute of Technology
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Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
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KOBAYASHI Yusuke
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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MANOJ C.
Dept. of Electrical Engineering, Indian Institute of Technology
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TSUTSUI Kazuo
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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HARIHARAN Venkanarayan
Dept. of Electrical Engineering, Indian Institute of Technology
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KAKUSHIMA Kuniyuki
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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RAO V.
Dept. of Electrical Engineering, Indian Institute of Technology
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Hariharan Venkanarayan
Dept. Of Electrical Engineering Indian Institute Of Technology
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Tsutsui Kazuo
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Kobayashi Yusuke
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Rao V.
Dept. Of Electrical Engineering Indian Institute Of Technology
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Manoj C.
Dept. Of Electrical Engineering Indian Institute Of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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KAKUSHIMA Kuniyuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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