Study on Stability of Pentacene-Based Metal–Oxide–Semiconductor Diodes in Air Using Capacitance–Voltage Characteristics
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概要
- 論文の詳細を見る
The stability of bottom-gate pentacene-based metal–oxide–semiconductor (MOS) diodes in air up to 30 days was investigated. The capacitance–voltage ($C$–$V$) characteristics of the pentacene film in air showed a slight hysteresis (36 mV) without any surface treatment for as-fabricated pentacene-based MOS diodes. However, after 30 days, the hysteresis width further increased to 100 mV and flat-band voltages shifted toward positive voltage as well, which indicates that the electron trapping effects become stronger caused by either moisture or oxygen; thus, the stability of pentacene-based MOS diode characteristics degraded gradually.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Nishida Jun-ichi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Yamashita Yoshiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ohmi Shun-Ichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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Yamashita Yoshiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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Akhtaruzzaman Md.
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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