Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)(<Special Section>High-κ Gate Dielectrics)
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概要
- 論文の詳細を見る
Electron cyclotron resonance (ECR) plasma oxidation of AlN thin films was studied to form the AlON high-k gate insulator. The leakage current was found to be decreased, and also the surface roughness was improved with the ECR plasma oxidation of AlN thin films. The leakage current was further decreased after 1000℃ RTA in N_2 with little increase of equivalent oxide thickness (EOT) because of the high quality interfacial layer formation.
- 社団法人電子情報通信学会の論文
- 2004-01-01
著者
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SAKAI Tetsushi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Sakai Tetsushi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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YAMANAKA Go
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Yamanaka Go
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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