Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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IWAI Hiroshi
Frontier Research Center, Tokyo Institute of Technology
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Taguchi Junichi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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YAMAMOTO Hiroyuki
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Tsutsui Kazuo
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yamamoto Hiroyuki
Frontier Collaborative Research Center Tokyo Institute Of Technology
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