Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
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概要
- 論文の詳細を見る
An oxidation process was applied to the fabrication of fluoride resonant tunneling diodes (RTDs) on Si substrates. The oxidation process was carried out after the growth of an ultrathin CaF2 layer on Si, and expected to passivate the Si surface in pinholes generated in the CaF2 layer. Leakage currents of Au/Al/CaF2/Si(111) metal insulator semiconductor (MIS) diodes were extremely reduced by introducing this process. Au/Al/CaF2/CdF2/CaF2/Si(111) double-barrier RTDs were also fabricated by introducing this process, the leakage currents of which were extremely reduced and a very large peak to valley current ratio (PVCR) of 1500 was obtained. It was also shown that the chemical reaction between a CdF2 well layer and the Si substrate was suppressed by the oxidation process. Owing to this effect, high-temperature growth (up to 300°C) of the CdF2 well layer was realized for the first time in the fluoride RTDs, and resulted in the reduction of undesirable current drift.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Sugisaki Tsuyoshi
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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WATANABE So
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
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MAEDA Motoki
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
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Maeda Motoki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Watanabe So
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Tsutsui Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Sugisaki Tsuyoshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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