Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping

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概要

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• In a low-energy plasma doping process, the contribution of not only ionized species but also neutral species to the doping process should be considered. To investigate such a contribution, experiments involving gas phase doping combined with Ar plasma pretreatment were carried out. As a result, a significant increase in boron dose from a neutral gas phase was observed when the substrate surface was subjected to Ar plasma pretreatment prior to exposure to neutral B2H6/He gas. Through a comprehensive study of the effects of plasma pretreatment and gas exposure conditions on the boron dose from the neutral gas phase, the substrate temperature at which the surface was exposed to the neutral B2H6/He gas after the plasma pretreatment was observed to significantly increase the boron dose.

• 2005-06-15

著者

• Sato Takahisa

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Mizuno Bunji

  Ultimate Junction Technologies Inc.

• Tsutsui Kazuo

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Iwai Hiroshi

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Mizuno Bunji

  Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan

• Sasaki Yuichiro

  Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan

• Sato Takahisa

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

• Higaki Ryota

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G2-26, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

• Tamura Hideki

  Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan

• Okashita Katsumi

  Ultimate Junction Technologies Inc., Japan, 3-1-1 Yagumonakamachi, Moriguchi, Osaka 570-8501, Japan

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