Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry
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概要
- 論文の詳細を見る
Using the four-terminal geometry, quasi-Fermi potential profiles in the channel of silicon nanowire (SiNW) metal--oxide--semiconductor field-effect transistors (MOSFETs) have been successfully characterized during MOSFET operation, for the first time. We measured the voltages of two branches attached to the SiNW channel under various conditions of gate and drain voltages for MOSFET operation, and evaluated the quasi-Fermi potential profile. The experimental profile under the strong inversion condition agrees well with the theory. We believe that the implementation of the four-terminal geometry is promising for the evaluation of the energy potential profile in the SiNW channel.
- 2011-04-25
著者
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Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kakushima Kuniyuki
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Ohmori Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamada Keisaku
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sato Soshi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Natori Kenji
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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