Ahmet Parhat | Frontier Collaborative Research Center Tokyo Institute Of Technology
スポンサーリンク
概要
関連著者
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Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Natori Kenji
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Hattori Takeo
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Nishiyama Akira
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Kakushima Kuniyuki
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Ohmori Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hattori Takeo
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Koyanagi Tomotsune
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Wu Yan
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Dou Chunmeng
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Wei Feng
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kataoka Yoshinori
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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IWAI Hiroshi
Tokyo Institute of Technology
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IWAI Hiroshi
Frontier Research Center, Tokyo Institute of Technology
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Hanada T
Department Of Chemistry Graduate School Of Science Kyoto University
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Hanada Teiichi
Department Of Chemistry Graduate School Of Science Kyoto University
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Geni Mamtimin
School Of Mechanical Engineering Xinjiang University
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KONDO Yuki
Research Center, Asahi glass Co., Ltd.
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KOBAYASHI Yusuke
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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MANOJ C.
Dept. of Electrical Engineering, Indian Institute of Technology
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TSUTSUI Kazuo
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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HARIHARAN Venkanarayan
Dept. of Electrical Engineering, Indian Institute of Technology
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KAKUSHIMA Kuniyuki
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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RAO V.
Dept. of Electrical Engineering, Indian Institute of Technology
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YOSHIMOTO Mamoru
Materials and Structures Laboratory Tokyo Institute of Technology
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SASAKI Atsushi
Materials and Structures Laboratory Tokyo Institute of Technology
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AKIBA Shusaku
Materials and Structures Laboratory, Tokyo Institute of Technology
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Takakura Masahiro
Materials And Structures Laboratory Tokyo Institute Of Technology
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MATSUDA Akifumi
Materials and Structures Laboratory, Tokyo Institute of Technology
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HARA Wakana
Materials and Structures Laboratory, Tokyo Institute of Technology
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OKADA Takashi
Materials and Structures Laboratory, Tokyo Institute of Technology
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WATANABE Takahiro
Materials and Structures Laboratory, Tokyo Institute of Technology
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ITO Setsuro
Research Center, Asahi Glass Co., Ltd.
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CHIKYO Toyohiro
National Institute for Material Science
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TANABE Setsuhisa
Graduate School of Human and Environmental Studies, Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kondo Yuki
Research Center Asahi Glass Co. Ltd.
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Hara Wakana
Materials And Structures Laboratory Tokyo Institute Of Technology
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Ito Setsuro
Research Center Asahi Glass Co. Ltd.
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Hariharan Venkanarayan
Dept. Of Electrical Engineering Indian Institute Of Technology
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Akiba Shusaku
Materials And Structures Laboratory Tokyo Institute Of Technology
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Chikyo Toyohiro
National Institute For Materials Science (nims)
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Tsutsui Kazuo
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Tanabe Setsuhisa
Graduate School Of Human And Environmental Studies Kyoto Univ.
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Tanabe Setsuhisa
Graduate School Of Human And Environmental Studies Kyoto University
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Kobayashi Yusuke
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Rao V.
Dept. Of Electrical Engineering Indian Institute Of Technology
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Matsuda Akifumi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Manoj C.
Dept. Of Electrical Engineering Indian Institute Of Technology
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Okada Takashi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Watanabe Takahiro
Materials And Structures Laboratory Tokyo Institute Of Technology
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KAKUSHIMA Kuniyuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Yamada Keisaku
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sato Soshi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Tachi Kiichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Okamoto Kouichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamashita Koji
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Tsutsui Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Zade Dariush
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kanda Takashi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Nohira Hiroshi
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Ahmet Parhat
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Song Jaeyeol
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Tokyo 169-8555, Japan
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Kouda Miyuki
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kitayama Daisuke
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kubota Toru
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Abudukelimu Abudureheman
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yasenjiang Wufuer
School of Mechanical Engineering, Xinjiang University, 1234 Yananlu, Urumqi 830047, China
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OHMORI Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba
著作論文
- Parasitic Effects in Multi-Gate MOSFETs(Integrated Electronics)
- Fabrication of Optically Active Er^-Doped Bi_2O_3-SiO_2 Glass Thin Films by Pulsed Laser Deposition
- Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
- Effects of scattering direction of hot electrons in the drain of ballistic n[+]-i-n[+] diode
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
- Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
- Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)