Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

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概要

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• We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal--oxide--semiconductor (MOS) capacitor was evaluated. We found that HMDS surface treatment of InGaAs, followed by La2O3 deposition and forming gas annealing reduces the MOS capacitor's interface state density more effectively than (NH4)2S treatment. The comparison of the capacitance--voltage data shows that the HMDS-treated sample reaches a maximum accumulation capacitance of 2.3 μF/cm2 at 1 MHz with roughly 40% less frequency dispersion near accumulation, than the sample treated with (NH4)2S solution. These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation.

• 2011-10-25

著者

• Ahmet Parhat

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Tsutsui Kazuo

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Iwai Hiroshi

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Kakushima Kuniyuki

  Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology

• Natori Kenji

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Hattori Takeo

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Hattori Takeo

  Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Sugii Nobuyuki

  Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Yamashita Koji

  Tokyo City University, Setagaya, Tokyo 158-8557, Japan

• Tsutsui Kazuo

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Zade Dariush

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Kanda Takashi

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Nohira Hiroshi

  Tokyo City University, Setagaya, Tokyo 158-8557, Japan

• Nishiyama Akira

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Kakushima Kuniyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Sugii Nobuyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

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