Hattori Takeo | Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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概要
- Hattori Takeoの詳細を見る
- 同名の論文著者
- Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japanの論文著者
関連著者
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Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Hattori Takeo
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Natori Kenji
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Nishiyama Akira
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Hattori Takeo
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Sugii Nobuyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Kakushima Kuniyuki
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Ohmori Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Koyanagi Tomotsune
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Wu Yan
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Dou Chunmeng
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Wei Feng
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kataoka Yoshinori
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Tachi Kiichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Okamoto Kouichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yamashita Koji
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Tsutsui Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Zade Dariush
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kanda Takashi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Nohira Hiroshi
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Ahmet Parhat
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Song Jaeyeol
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Watanabe Takanobu
Institute for Nanoscience and Nanotechnology, Waseda University, Tokyo 169-8555, Japan
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Kouda Miyuki
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kitayama Daisuke
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kubota Toru
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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OHMORI Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba
著作論文
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
- Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
- Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)