Koyanagi Tomotsune | Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
スポンサーリンク
概要
- Koyanagi Tomotsuneの詳細を見る
- 同名の論文著者
- Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japanの論文著者
関連著者
-
Ahmet Parhat
Frontier Collaborative Research Center Tokyo Institute Of Technology
-
Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
-
Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
-
Hattori Takeo
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
-
Koyanagi Tomotsune
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Sugii Nobuyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Kakushima Kuniyuki
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
-
Natori Kenji
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Hattori Takeo
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Tachi Kiichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Okamoto Kouichi
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Sugii Nobuyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Nishiyama Akira
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Kakushima Kuniyuki
Interdisciplinary Graduate School of Science, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Kitayama Daisuke
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
-
Kubota Toru
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
著作論文
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol