Study of High-\kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy
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概要
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We have investigated the effect of La2O3 interlayer insertion on the thermal stability of a high-\kappa/In0.53Ga0.47As interface and the chemical bonding states at the high-\kappa/In0.53Ga0.47As interface by hard X-ray (h\nu = 7.94 keV) photoemission spectroscopy (HX-PES). The control of the oxide formation at the HfO2/In0.53Ga0.47As interface was tried by inserting La2O3, which has a large Gibbs free energy. Analyses of As 2p, Ga 2p, In 3d, Hf 3d, La 3d, and W 4f spectra show that the oxidation of In0.53Ga0.47As was suppressed by La2O3 interlayer insertion. We have also investigated the effect of surface treatment on the chemical bonding state of the In0.53Ga0.47As surface. (NH4)2S treatment can suppress the oxidation of the In0.53Ga0.47As surface.
- 2011-10-25
著者
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WATANABE Masato
Tokyo Institute of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yamashita Koji
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Nohira Hiroshi
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Kakushima Kuniyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Numajiri Yuuya
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Iwai Hiroshi
Frontier Research Center Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Watanabe Masato
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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